DocumentCode :
1682676
Title :
High performance CMOS voltage comparator
Author :
Gandhi, Priyesh P. ; Devashrayee, N.M.
Author_Institution :
Inst. of Technol., Nirma Univ., Ahmedabad, India
fYear :
2013
Firstpage :
1
Lastpage :
5
Abstract :
This paper proposes a High Performance CMOS voltage comparator for A/D Converters. The simulation is carried out in 130nm and 90nm technologies. The supply voltage for this comparator is 1v and 0.9v for 130nm and 90nm respectively. The simulation results shows that the speed of 1.92GHz and 2.44GHz with the power dissipation of 9.19μW and 7.45μW was achieved in case of Typical Transistor 130nm and 90nm technologies respectively. Corner analysis was carried out for the comparator.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); CMOS voltage comparator; analog-digital converter; power 7.45 muW; power 9.19 muW; size 130 nm; size 90 nm; voltage 0.9 V; voltage 1 V; CMOS integrated circuits; CMOS technology; Educational institutions; Power dissipation; Simulation; Transient response; Transistors; FNFP; ICMR; Offset Voltage; SNSP; TT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Engineering (NUiCONE), 2013 Nirma University International Conference on
Conference_Location :
Ahmedabad
Print_ISBN :
978-1-4799-0726-7
Type :
conf
DOI :
10.1109/NUiCONE.2013.6780141
Filename :
6780141
Link To Document :
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