Title :
Ionizing Radiation Sensor by Using N2 Implanted MONOS Device
Author :
Hsieh Wen Ching ; Shich Chuan Wu
Author_Institution :
Dept. of Opto-Electron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
The N2 implantation metal-oxide-nitride-oxide-silicon (hereafter N2-MONOS) can be candidates for nonvolatile gamma radiation sensors. In the case of N2-MONOS gamma radiation sensors, the gamma ray radiation induces a significant decrease of threshold voltage. The change of threshold voltage for N2-MONOS after gamma irradiation has a strong correlation to the dose of gamma ray exposure as well. The N2-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile ionizing radiation sensing in the future.
Keywords :
MOS capacitors; elemental semiconductors; gamma-ray detection; ion implantation; nitrogen; semiconductor doping; silicon; silicon compounds; N2; N2 implantation; N2-MONOS capacitor device; SiO2-Si3N4-SiO2-Si; ionizing radiation sensor; metal-oxide-nitride-oxide-silicon device; nonvolatile gamma radiation sensors; threshold voltage; Capacitors; Electron traps; Logic gates; MONOS devices; Radiation effects; Threshold voltage; Gamma; MONOS; N2; Nonvolatile; Sensor;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2014 International Symposium on
Conference_Location :
Taichung
DOI :
10.1109/IS3C.2014.271
