DocumentCode
1683224
Title
A monolithic double balanced mixer using passive GaAs MESFETs
Author
Närhi, Tapani
Author_Institution
Telecommun. Lab., Tech. Res. Centre of Finland, Espoo, Finland
fYear
1989
Firstpage
336
Lastpage
338
Abstract
A monolithic double balanced mixer has been realized using 1-μm GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; mixers (circuits); 1 micron; GaAs technology; III-V semiconductor; MESFET; channel resistance; conversion loss; high compression point; input third-order intercept point; linear region; low intermodulation distortion; monolithic double balanced mixer; Diodes; Electrical resistance measurement; FETs; Gallium arsenide; Knee; Linearity; MESFETs; Mixers; Radio frequency; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 1989. Proceedings. 'Integrating Research, Industry and Education in Energy and Communication Engineering', MELECON '89., Mediterranean
Conference_Location
Lisbon
Type
conf
DOI
10.1109/MELCON.1989.50050
Filename
50050
Link To Document