A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications

Author

Geunyong Lee ; Jonghun Jung ; Jong-In Song

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2013

Firstpage

232

Lastpage

234

Abstract

This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; mobile radio; power amplifiers; quadrature amplitude modulation; three-dimensional integrated circuits; 2-stage cascade structure; ACLR1; BiCMOS technology; HBT power amplifier; PA; SiGe; TSV; low inductance through-silicon-via; matching networks; mobile 16 QAM LTE application; mobile Long Term Evolution application; output power power amplifier; size 0.35 mum; Heterojunction bipolar transistors; Impedance matching; Long Term Evolution; Mobile communication; Power amplifiers; Power generation; Silicon germanium; SiGe HBT; mobile LTE applications; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2013 IEEE

Conference_Location

Austin, TX

ISSN

2164-2958

Print_ISBN

978-1-4673-2929-3

Electronic_ISBN

2164-2958

Type

conf

DOI

10.1109/RWS.2013.6486698

Filename

6486698