Title :
Recent Advances in AlInsAs Avalanche Photodiodes
Author :
Yagyu, E. ; Ishimura, E. ; Nakaji, M. ; Itamoto, H. ; Aoyagi, T. ; Yoshiara, K. ; Tokuda, Y.
Author_Institution :
Mitsubishi Electr. Corp., Amagasaki
Abstract :
We present practical planar AlInAs APDs, which have large gain-bandwidth products, low noise, and high reliability. The APD receivers had a sensitivity of-28.6 dBm at 10 Gb/s and -37.0 dBm at 2.5 Gb/s.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; wide band gap semiconductors; AlInAs; avalanche photodiode; bit rate 10 Gbit/s; bit rate 2.5 Gbit/s; high reliability device; large gain-bandwidth; low noise photodiode; Absorption; Aging; Avalanche photodiodes; Dark current; Distributed Bragg reflectors; Indium phosphide; Optical receivers; P-n junctions; Substrates; Zinc;
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
DOI :
10.1109/OFC.2007.4348674
