A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS

Author

Jayamon, J. ; Agah, A. ; Hanafi, B. ; Dabag, H. ; Buckwalter, J. ; Asbeck, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

Firstpage

256

Lastpage

258

Abstract

A 90GHz power amplifier implemented with three series-connected (stacked) FETs in 45-nm SOI CMOS is reported. Stacking FETs allows increasing voltage handling capability of circuits with highly scaled CMOS transistors. This work shows for the first time that the stacking strategy is effective up to W band. The amplifier achieves power gain of 8 dB at 91 GHz with 3 dB bandwidth of 18 GHz using a supply voltage of 4.2 V. It delivers saturated output power of 17.3 dBm in 88-90 GHz range with peak PAE of 9 %. The PA chip occupies 0.256 mm² including the pads. This chip demonstrates the highest output power from a CMOS PA in this frequency regime.

Keywords

CMOS analogue integrated circuits; MOSFET; field effect MIMIC; millimetre wave power amplifiers; silicon-on-insulator; CMOS PA; SOI MOS; W-band stacked FET power amplifier; bandwidth 18 GHz; frequency 88 GHz to 90 GHz; frequency 91 GHz; gain 8 dB; highly scaled CMOS transistors; series-connected FET; size 45 nm; voltage 4.2 V; CMOS integrated circuits; Field effect transistors; Gain; Logic gates; Power amplifiers; Power generation; Stacking; CMOS SOI; Power amplifier; W-band; millimeter-wave; stacked FET;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2013 IEEE

Conference_Location

Austin, TX

ISSN

2164-2958

Print_ISBN

978-1-4673-2929-3

Electronic_ISBN

2164-2958

Type

conf

DOI

10.1109/RWS.2013.6486706

Filename

6486706