DocumentCode
1684165
Title
A fully integrated Bulk-CMOS switch based tunable transformer for RF and antenna matching
Author
Bakalski, W. ; Thomas, Abu ; Weigel, Robert
Author_Institution
RF & Protection Devices, Infineon Technol., Neubiberg, Germany
fYear
2013
Firstpage
313
Lastpage
315
Abstract
A fully integrated tunable RF impedance matching network based on a transformer topology and on-chip RF switches is presented. Using the Infineon 130nm Bulk-CMOS RF switch process with 2.4μm alumina top metal, the chip integrates a 4-bit digitally tunable capacitor, a planar transformer with 4 independent windings and 12 taps, an on-chip charge pump and RF switches to control the operating mode of capacitor and the transformer. The circuit offers the possibility to cover the Smith Chart at either low and high impedance up to a VSWR of 10 on the GSM band 790-960 MHz. In by-pass mode the insertion loss is 0.8dB at 850 MHz and features a harmonic generation of -85dBc (H2) and -75 dBc (H3) without the need of any external devices or extra controller. The current consumption at 1.5V is 120μA.
Keywords
CMOS integrated circuits; UHF antennas; cellular radio; impedance matching; mobile antennas; transformers; 4-bit digitally tunable capacitor; GSM band; RF switches; VSWR; alumina top metal; antenna matching; frequency 790 MHz to 960 MHz; fully integrated bulk-CMOS switch; fully integrated tunable RF impedance matching network; harmonic generation; on-chip RF switches; onchip charge pump; planar transformer; transformer topology; tunable transformer; voltage 1.5 V; Capacitors; Impedance; Insertion loss; Radio frequency; Switches; Transistors; Windings; Antenna; GSM; impedance transformer; matching; mobile phone; power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location
Austin, TX
ISSN
2164-2958
Print_ISBN
978-1-4673-2929-3
Electronic_ISBN
2164-2958
Type
conf
DOI
10.1109/RWS.2013.6486725
Filename
6486725
Link To Document