DocumentCode
1684453
Title
Non-reciprocal faraday rotation in graphene: Just a unique phenomenon or even more?
Author
Sounas, D.L. ; Caloz, C.
Author_Institution
Electr. Eng. Dept., Ecole Polytech. de Montreal, Montreal, QC, Canada
fYear
2013
Firstpage
352
Lastpage
354
Abstract
Faraday rotation observed in magnetically biased graphene is reviewed. For the best quality of CVD grown graphene to date and a magnetic field of 1 T a Faraday rotation around 10° is estimated. In contrast to other gyrotropic materials such as ferrites where rotation direction can only be controlled by the magnetic bias field, the rotation direction in graphene can be reversed by reversing an electric bias voltage applied between graphene and a gate electrode. The rotation angle is proportional to the mobility of graphene, which imposes a practical challenge in achieving rotation angles greater than 15°. However, even angles as low as 10° are enough to design isolators with isolation in the order of 20 dB. Due to the conducting nature of graphene at microwave frequencies, such devices are always accompanied by moderate loss, which however can be considered acceptable accounting advantages of graphene-based devices, such as easy tunability and invunerability to demagnetization effects present in ferrite-based devices.
Keywords
Faraday effect; carrier mobility; chemical vapour deposition; conducting materials; demagnetisation; graphene; magnetic fields; magnetic leakage; microwave isolators; C; CVD; conducting graphene; demagnetization effects; electric bias voltage; gate electrode; graphene mobility; graphene-based devices; invunerability; isolator design; magnetic bias field; magnetic flux density 1 T; magnetically biased graphene; microwave frequencies; moderate loss; nonreciprocal Faraday rotation; rotation angle; tunability; Conductivity; Faraday effect; Ferrites; Graphene; Isolators; Magnetic tunneling; Faraday rotation; Graphene; ambipolarity; isolator;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio and Wireless Symposium (RWS), 2013 IEEE
Conference_Location
Austin, TX
ISSN
2164-2958
Print_ISBN
978-1-4673-2929-3
Electronic_ISBN
2164-2958
Type
conf
DOI
10.1109/RWS.2013.6486738
Filename
6486738
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