DocumentCode
1684925
Title
FOSS EKV 2.6 parameter extractor
Author
Grabinski, Wladek ; Tomaszewski, Daniel ; Jazaeri, Farzan ; Mangla, Anurag ; Sallese, Jean-Michel ; Chalkiadaki, Maria-Anna ; Bazigos, Antonios ; Bucher, Matthias
Author_Institution
GMC Res., Switzerland
fYear
2015
Firstpage
181
Lastpage
186
Abstract
The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS technologies continue geometry scaling the designers can benefit using dedicated SPICE MOSFET models and apply specific analog design methodologies. The EKV was developed especially to meet altogether the analog/RF design requirements. This paper describes a basic set of the DC parameter extraction steps for the EKV 2.6 model. The free open source software (FOSS) Profile2D tool was used to illustrate accurate EKV 2.6 DC extraction strategy.
Keywords
CMOS analogue integrated circuits; MOSFET; SPICE; integrated circuit design; semiconductor device models; CMOS technologies; DC parameter extraction steps; EKV 2.6 DC extraction strategy; EKV 2.6 model; FOSS EKV 2.6 parameter extractor; advanced integrated circuits; analog design methodologies; analog/RF design requirements; dedicated SPICE MOSFET models; device level modeling; free open source software Profile2D tool; geometry scaling; low power analog and radio-frequency application; micrometer CMOS process; nanometer CMOS process; Adaptation models; Integrated circuit modeling; MOSFET; Mathematical model; Parameter extraction; Semiconductor device modeling; Voltage measurement; DC; EKV 2.6; FOSS; Profile2D; parameter extraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits & Systems (MIXDES), 2015 22nd International Conference
Conference_Location
Torun
Print_ISBN
978-8-3635-7806-0
Type
conf
DOI
10.1109/MIXDES.2015.7208507
Filename
7208507
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