On the modelisation of the main characteristics of SOI Hall cells by three-dimensional physical simulations

In this paper a gradual investigation of a particular Hall sensor in SOI (“Silicon-On-Insulator”) technology is presented. The most important parameters of a specific Hall cell, based on SOI structure, are evaluated through three-dimensional physical simulations. The fact that the depth of the active silicon layer in SOI integration process is much smaller than in a regular CMOS is immediately reflected in both increased sensitivity and increased input resistance. The Hall shape is modeled after an XFAB SOI XI10 integration process. The magnetic sensors in this particular non-fully depleted SOI technology are highly suitable for high temperature applications. In order to verify its behaviour, the Hall voltage and absolute sensitivity were obtained through simulations. The temperature influence was also investigated for the considered SOI Hall cell.