DocumentCode
1686013
Title
An electrically pumped hybrid silicon evanescent amplifier
Author
Hyundai Park ; Fang, A.W. ; Bowers, John E.
Author_Institution
Univ. of California Santa Barbara, Santa Barbara
fYear
2007
Firstpage
1
Lastpage
3
Abstract
A hybrid silicon evanescent amplifier utilizing a wafer bonded structure of a silicon waveguide and AlGalnAs quantum wells is demonstrated. Maximum chip gain obtained is 13 dB with a 3 dB output saturation power of 11 dBm.
Keywords
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical pumping; optical waveguides; quantum well devices; semiconductor optical amplifiers; wafer bonding; AlGaInAs; AlGaInAs - System; electrical pumping; gain 13 dB; gain 3 dB; quantum well; silicon evanescent amplifier; silicon waveguide; wafer bonded structure; Indium phosphide; Optical amplifiers; Optical pumping; Optical saturation; Optical surface waves; Optical waveguides; Plasma temperature; Semiconductor optical amplifiers; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location
Anaheim, CA
Print_ISBN
1-55752-831-4
Type
conf
DOI
10.1109/OFC.2007.4348775
Filename
4348775
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