Title :
An electrically pumped hybrid silicon evanescent amplifier
Author :
Hyundai Park ; Fang, A.W. ; Bowers, John E.
Author_Institution :
Univ. of California Santa Barbara, Santa Barbara
Abstract :
A hybrid silicon evanescent amplifier utilizing a wafer bonded structure of a silicon waveguide and AlGalnAs quantum wells is demonstrated. Maximum chip gain obtained is 13 dB with a 3 dB output saturation power of 11 dBm.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical pumping; optical waveguides; quantum well devices; semiconductor optical amplifiers; wafer bonding; AlGaInAs; AlGaInAs - System; electrical pumping; gain 13 dB; gain 3 dB; quantum well; silicon evanescent amplifier; silicon waveguide; wafer bonded structure; Indium phosphide; Optical amplifiers; Optical pumping; Optical saturation; Optical surface waves; Optical waveguides; Plasma temperature; Semiconductor optical amplifiers; Silicon; Stimulated emission;
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
DOI :
10.1109/OFC.2007.4348775
