DocumentCode
1686365
Title
Numerical simulation for two-dimensional quantum well AlGaAs/GaAs HEMT
Author
Yimen, Zhang ; Jian, Shang ; Cuiping, Li
Author_Institution
Microelectron. Inst., Xidian Univ., China
fYear
1992
Firstpage
817
Abstract
An accurate model based on static state electron energy and momentum conservation equation model has been presented for heterostructure devices considering the quantum energy states in the 2DEG well. The energy and momentum relaxation time model in different valleys is introduced, and the computation is based on the Ferni-Dirac statistics. The numerical scheme for solving the four main equations simultaneously has been found to be stable and efficient. Numerical results for HEMTs fit the experiment data well
Keywords
aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; AlGaAs-GaAs; Ferni-Dirac statistics; HEMT; III-V semiconductors; heterostructure devices; momentum conservation equation; momentum relaxation time model; numerical simulation; quantum energy states; static state electron energy; two-dimensional quantum well; valleys; Electrons; Equations; FETs; Gallium arsenide; HEMTs; Mie scattering; Nominations and elections; Numerical simulation; Optical scattering; Statistics;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on
Conference_Location
Xian
Print_ISBN
0-7803-0042-4
Type
conf
DOI
10.1109/ISIE.1992.279519
Filename
279519
Link To Document