Title :
Numerical simulation for two-dimensional quantum well AlGaAs/GaAs HEMT
Author :
Yimen, Zhang ; Jian, Shang ; Cuiping, Li
Author_Institution :
Microelectron. Inst., Xidian Univ., China
Abstract :
An accurate model based on static state electron energy and momentum conservation equation model has been presented for heterostructure devices considering the quantum energy states in the 2DEG well. The energy and momentum relaxation time model in different valleys is introduced, and the computation is based on the Ferni-Dirac statistics. The numerical scheme for solving the four main equations simultaneously has been found to be stable and efficient. Numerical results for HEMTs fit the experiment data well
Keywords :
aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; semiconductor quantum wells; AlGaAs-GaAs; Ferni-Dirac statistics; HEMT; III-V semiconductors; heterostructure devices; momentum conservation equation; momentum relaxation time model; numerical simulation; quantum energy states; static state electron energy; two-dimensional quantum well; valleys; Electrons; Equations; FETs; Gallium arsenide; HEMTs; Mie scattering; Nominations and elections; Numerical simulation; Optical scattering; Statistics;
Conference_Titel :
Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on
Conference_Location :
Xian
Print_ISBN :
0-7803-0042-4
DOI :
10.1109/ISIE.1992.279519
