DocumentCode :
1686606
Title :
Testing issues on high speed synchronous DRAMs
Author :
Lee, Wha-Joon
Author_Institution :
Memory Bus. Div., Samsung Electronics Co., Suwon, South Korea
fYear :
34608
Firstpage :
363
Abstract :
The test programming becomes very much complicated due to functionality and special features implemented in SDRAMs. Considering the combination of speed variations and operational modes, the number of the test items would easily exceed beyond the acceptable limit. The SDRAM testing issues are listed as follows: high speed tests with a slow production tester; load board and load circuit design for high speed testing; and test program development for the new features
Keywords :
DRAM chips; automatic test software; automatic testing; fault diagnosis; peripheral interfaces; production testing; very high speed integrated circuits; CTT; GTL; LVTTL; SDRAM testing; high speed synchronous DRAM; high speed tests; interface standards; load board; load circuit design; noise; operational modes; speed variations; test programming; Circuit noise; Circuit testing; Clocks; Graphics; Microprocessors; Production; Random access memory; SDRAM; Software testing; System testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 1994. Proceedings., International
Conference_Location :
Washington, DC
ISSN :
1089-3539
Print_ISBN :
0-7803-2103-0
Type :
conf
DOI :
10.1109/TEST.1994.527973
Filename :
527973
Link To Document :
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