Title :
Development of an empirical large signal model for SiC MESFETs
Author :
Manohar, S. ; Pham, A. ; Evers, N.
Author_Institution :
Holcombe Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
Abstract :
We present the development of an empirical nonlinear model for silicon carbide MESFETs. The proposed channel current model is single piece, continuously differentiable and capable of accurately modeling the current-voltage characteristics of SiC MESFETs. The nonlinear model has been implemented in a commercial computer-aided-design (CAD) tool and its validity has been verified against DC I-V curves, S-parameters (up to 8 GHz) and load-pull power measurements.
Keywords :
S-parameters; Schottky gate field effect transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; MESFET; S-parameters; SiC; channel current model; computer-aided-design tool; current-voltage characteristics; empirical large signal model; empirical nonlinear model; load-pull power measurements; Electrons; Gallium arsenide; Knee; MESFETs; Nonlinear equations; Power measurement; Research and development; Silicon carbide; Thermal conductivity; Voltage;
Conference_Titel :
ARFTG Conference Digest, Spring 2002. 59th
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-7143-7
DOI :
10.1109/ARFTGS.2002.1214676
