Title :
An amplifier design methodology derived from a MOSFET current-based model
Author :
Pinto, R. L Oliveira ; Cunha, A.I.A. ; Schneider, M.C. ; Galup-Montoro, C.
Author_Institution :
Lab. de Instr. Eletronica, Univ. Fed. de Santa Catarina, Florianopolis, Brazil
Abstract :
This paper presents a design methodology for MOS amplifiers based on a universal model of the MOSFET, valid from weak to strong inversion. A set of very simple expressions allows quick design by hand as well as an evaluation of the design in terms of power consumption and silicon real estate. The design and integration of a common-source amplifier illustrate the appropriateness of the proposed methodology
Keywords :
MOSFET; amplifiers; network synthesis; semiconductor device models; MOS amplifier; MOSFET current-based model; common-source amplifier; design; inversion; power consumption; silicon real estate; Capacitance; Cutoff frequency; Design methodology; Differential amplifiers; Equations; Instruments; MOSFET circuits; Operational amplifiers; Semiconductor device modeling; Voltage;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.704421
