Title :
Time domain RF characterisation of a thin-film metamorphic HEMT under modulated backside illumination
Author :
Vandersmissen, R. ; Schreurs, D. ; Vandenberghe, S. ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
It is shown in this paper how the opto-electrical interaction of a microwave device can be characterized by combining a large-signal network analyzer set-up with a modulated laser module. The concept is demonstrated by measuring a "thin film" M(etamorphic) HEMT under modulated optical (1550 nm laser light) illumination. The advantage of this approach is that the time-domain characteristics of the electrical currents, generated by the modulated laser light, can be visualised and analysed.
Keywords :
high electron mobility transistors; microwave field effect transistors; microwave measurement; optical modulation; semiconductor device measurement; thin film transistors; time-domain analysis; 1550 nm; electrical currents; high electron mobility transistor; large-signal network analyzer set-up; microwave device; modulated backside illumination; modulated laser light; modulated laser module; modulated optical illumination; opto-electrical interaction; thin-film metamorphic HEMT; time domain RF characterisation; HEMTs; Lighting; Masers; Microwave devices; Optical films; Optical modulation; Radio frequency; Time domain analysis; Transistors; mHEMTs;
Conference_Titel :
ARFTG Conference Digest, Spring 2002. 59th
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-7143-7
DOI :
10.1109/ARFTGS.2002.1214680
