Title :
Failure analysis of IGBT in intelligent power module
Author :
Tao Ning ; Shao Hua Yang ; Ze Yang Peng
Author_Institution :
Coll. of Inf. Sci. & Technol., Jinan Univ., Jinan, China
Abstract :
A failure analysis case study of insulated gate bipolar transistor (IGBT) in a intelligent power module (IPM) was introduced. In this paper, the failure mode and mechanism of an IGBT were identified by a series of failure analysis procedures. The high temperature reverse bias stress tests and ion chromatography analysis have been performed to analyze and verify its root failure causes. It indicated that the failure of IGBT chips was caused by the defects on passivation layer and the movable ions were from plastic packaging material and PCBA interface. Those resulted in the inner equipotential rings sustain overvoltage stress, and ultimately leaded to the breakdown of IGBT.
Keywords :
electric breakdown; failure analysis; insulated gate bipolar transistors; integrated circuit testing; overvoltage; passivation; plastic packaging; power integrated circuits; IGBT chips; IPM; PCBA interface; failure analysis case study; high temperature reverse bias stress tests; inner equipotential rings; insulated gate bipolar transistor; integrated power device; intelligent power module; ion chromatography analysis; overvoltage stress; passivation layer; plastic packaging material; Failure analysis; Insulated gate bipolar transistors; Ions; Metallization; Multichip modules; Passivation; Stress; IGBT; IPM; contamination ion; passivation crack;
Conference_Titel :
Applied Superconductivity and Electromagnetic Devices (ASEMD), 2013 IEEE International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0068-8
DOI :
10.1109/ASEMD.2013.6780749
