Title :
Wavelength tuning of InGaAs/GaAs laser diodes by the application of high hydrostatic pressure
Author :
Dybala, F. ; Adamiec, P. ; Bercha, A. ; Trzeciakowski, W.
Author_Institution :
High Pressure Res. Center, Warsaw
fDate :
6/24/1905 12:00:00 AM
Abstract :
We show that InGaAs/GaAs quantum-well lasers emitting around 1000 nm can be wavelength tuned by applying high hydrostatic pressure (up to 20 kbar). Two types of devices have been studied: a commercial single-mode 50 mW laser emitting at 980 nm and the high-power laser grown by MBE at the Institute of Electron Technology emitting at 1010 nm. For both lasers the tuning range was close to 140 nm i.e. the 980 nm. laser can be tuned down to about 840 nm. Both the threshold currents and the quantum efficiencies remained constant throughout the whole tuning range. Pressure tuning might therefore be useful for diode-pumped solid-state lasers, which require pumping wavelengths in the 840-980 nm range.
Keywords :
III-V semiconductors; gallium arsenide; hydrostatics; indium compounds; laser modes; laser transitions; laser tuning; molecular beam epitaxial growth; quantum well lasers; 1000 nm; 1010 nm; 50 mW; 840 nm; 980 nm; InGaAs-GaAs; InGaAs/GaAs laser diode wavelength tuning; InGaAs/GaAs quantum-well lasers; MBE growth; diode pumped solid-state lasers; high hydrostatic pressure; pumping wavelengths; quantum efficiencies; single-mode laser; threshold currents; tuning range; wavelength tuned; Diode lasers; Electron emission; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser tuning; Pump lasers; Quantum well lasers; Solid lasers; Threshold current;
Conference_Titel :
Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on
Print_ISBN :
0-7803-7375-8
DOI :
10.1109/ICTON.2002.1007861