• DocumentCode
    1688163
  • Title

    All-semiconductor metamaterial with negative refraction in the near-infrared

  • Author

    Naik, Gururaj V. ; Liu, Jingjing ; Kildishev, Alexander V. ; Shalaev, Vladimir M. ; Boltasseva, Alexandra

  • Author_Institution
    Sch. of Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    When heavily doped, semiconductors such as ZnO can exhibit metallic properties thus becoming versatile building blocks for optical metamaterials. Here, we design and fabricate an all-semiconductor metamaterial and demonstrate negative refraction in the near-infrared region.
  • Keywords
    II-VI semiconductors; heavily doped semiconductors; infrared spectra; metamaterials; refraction; wide band gap semiconductors; zinc compounds; ZnO-ZnO:Al; all-semiconductor metamaterial; heavily doped semiconductors; metallic properties; near-infrared region; negative refraction; optical metamaterials; versatile building blocks; Hidden Markov models; Metamaterials; Optical device fabrication; Optical imaging; Optical refraction; Plasmons; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326965