DocumentCode :
16887
Title :
Non-Binary Orthogonal Latin Square Codes for a Multilevel Phase Charge Memory (PCM)
Author :
Namba, Kazuteru ; Lombardi, Fabrizio
Author_Institution :
Grad. Sch. of Adv. Integration Sci., Chiba Univ., Chiba, Japan
Volume :
64
Issue :
7
fYear :
2015
fDate :
July 1 2015
Firstpage :
2092
Lastpage :
2097
Abstract :
This manuscript proposes non-binary orthogonal Latin square (OLS) codes that are amenable to a multilevel phase change memory (PCM). This is based on the property that the proposed (n symbols, ksymbols) t-symbol error correcting code uses the same H matrix as an (n bits, kbits) binary t-bit error correcting OLS code. The new codes are shown to have a shorter check bit length and better probability in encoding/decoding than conventional binary OLS codes. Extensive results are provided for assessment and comparison. The proposed codes are also shown to be always better than the matrix codes, i.e. independently of the metric and the parameters employed in the comparison.
Keywords :
matrix algebra; phase change memories; H matrix; PCM; binary t-bit error correcting OLS code; k symbols; matrix codes; multilevel phase charge memory; n symbols; nonbinary orthogonal latin square codes; t-bit error correcting OLS code; t-symbol error correcting code; Decoding; Delays; Error correction codes; Generators; Phase change materials; Power demand; Resistance; Error correcting code (ECC); multi??symbol error correcting code; orthogonal Latin square (OLS) codes; parallel decoder; phase change memory (PCM);
fLanguage :
English
Journal_Title :
Computers, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9340
Type :
jour
DOI :
10.1109/TC.2014.2346182
Filename :
6873246
Link To Document :
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