Characteristics of a new gate drive circuit for high-side N-MOSFET applied to high voltage circuits

Author

Ishida, Muneaki ; Kubo, Toshio ; Hori, Takamasa

Author_Institution

Dept. of Electr. & Electron. Eng., Mie Univ., Japan

fYear

1992

Firstpage

36

Abstract

This paper deals with some characteristics of a new type of gate drive circuit of high-side N-MOSFET, which is connected to the positive side line (high-side) of high voltage DC power supply (of more than 100 V). Construction and operation of the proposed gate drive circuit are explained, and analytical solutions describing steady-state and transient characteristics, which is useful for circuit design, are obtained. Experimental results are also presented, showing good agreement with the analytical results

Keywords

driver circuits; insulated gate field effect transistors; power supplies to apparatus; power transistors; semiconductor device models; semiconductor device testing; DC power supply; N-MOSFET; characteristics; circuit design; gate drive circuit; high voltage circuits; power transistors; semiconductor device models; steady-state; testing; transient; CMOS logic circuits; Delay; Diodes; Logic gates; MOSFET circuits; Power supplies; Switched capacitor circuits; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on

Conference_Location

Xian

Print_ISBN

0-7803-0042-4

Type

conf

DOI

10.1109/ISIE.1992.279624

Filename

279624