Title :
3-D Content Addressable Memory Architectures
Author :
Hu, Yong-Jyun ; Li, Jin-Fu ; Huang, Yu-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
Three-dimensional (3-D) integration is an emerging integrated circuit technology. Semiconductor memory is very suitable to be realized using 3-D technology due to its regularity. Different from random access memories (RAMs), a content addressable memory (CAM) has a priority address encoder (PAE) for evaluating the comparison result. The existing of PAE causes that the design of 3-D architectures for CAMs is more difficult than that for RAMs. This paper proposes a matchline-partitioned 3-D architecture and a searchline-partitioned 3-D architectures for CAMs. An inter-layer interleaving scheme is proposed to distribute PAE logic circuits evenly in two layers such that the footprint of a 3-D CAM is minimized. Experimental results show that the proposed 3-D CAM have better search performance for most of CAMs used in the industry.
Keywords :
content-addressable storage; integrated memory circuits; interleaved storage; logic circuits; 3-D content addressable memory; integrated circuit technology; interlayer interleaving; matchline-partitioned 3-D architecture; priority address encoder; searchline-partitioned 3-D architecture; semiconductor memory; three-dimensional integration; Associative memory; CADCAM; Computer aided manufacturing; Integrated circuit layout; Integrated circuit technology; Interleaved codes; Memory architecture; Random access memory; Read-write memory; Three-dimensional integrated circuits;
Conference_Titel :
Memory Technology, Design, and Testing, 2009. MTDT '09. IEEE International Workshop on
Conference_Location :
Hsinchu
Print_ISBN :
978-0-7695-3797-9
DOI :
10.1109/MTDT.2009.20