DocumentCode :
1689185
Title :
Design and pull-in voltage optimization of series metal-to-metal contact RF MEMS switch
Author :
Angira, Mahesh ; Sundram, G. Meenakshi ; Rangra, Kamaljit
Author_Institution :
Dept. of EEE, BITS Pilani, Pilani, India
fYear :
2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents the design, analysis and simulation of metal-to metal contact series rf-MEMS switch for its pull-in voltage optimization. Fixed - fixed flexure is used as a switching element and the Pull-in voltage is optimized for generating a force to obtain a stable contact resistance. Au is used as the contact material. The simulated value of the pull-in voltage (Vpi) is approximately 10.20 V. At the pull-in voltage the area occupied under contact is 8.89 μm2 and the value of contact force is 1.84 μN. The switch pull-in voltage value is optimized at a value of 23 V giving contact area of 924 μm2 and contact force of 31.55 μN.
Keywords :
electrical contacts; microswitches; contact force; fixed flexure; pull-in voltage optimization; series metal-to-metal contact RF MEMS switch; stable contact resistance; switch pull-in voltage value; switching element; Contacts; Force; Materials; Micromechanical devices; Microswitches; Radio frequency; Electrostatic actuation; Pull-in voltage; RF-MEMS; Series switch;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computing, Communication and Applications (ICCCA), 2012 International Conference on
Conference_Location :
Dindigul, Tamilnadu
Print_ISBN :
978-1-4673-0270-8
Type :
conf
DOI :
10.1109/ICCCA.2012.6179150
Filename :
6179150
Link To Document :
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