DocumentCode :
1689539
Title :
Do Quantum Dots or Quantum Wire Based Devices Offer a Practical Advantage in Producing Semiconductor Optical Amplifiers over Conventional 2-D Active Media
Author :
Eisenstein, Gadi
Author_Institution :
Technion, Haifa
fYear :
2007
Firstpage :
1
Lastpage :
2
Abstract :
Basic properties of nano-structure semiconductor gain media such as an inhomogeneously broadened gain, a fast response time, a low alpha-parameter and complex carrier dynamics yield amplifiers which are far superior to conventional quantum well amplifiers.
Keywords :
laser beams; quantum dot lasers; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wires; 2D active media; carrier dynamics yield amplifiers; inhomogeneously broadened gain; nanostructure semiconductor gain media; quantum dots; quantum well amplifiers; quantum wire; semiconductor optical amplifiers; Quantum dots; Semiconductor optical amplifiers; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location :
Anaheim, CA
Print_ISBN :
1-55752-831-4
Type :
conf
DOI :
10.1109/OFC.2007.4348924
Filename :
4348924
Link To Document :
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