DocumentCode
1689539
Title
Do Quantum Dots or Quantum Wire Based Devices Offer a Practical Advantage in Producing Semiconductor Optical Amplifiers over Conventional 2-D Active Media
Author
Eisenstein, Gadi
Author_Institution
Technion, Haifa
fYear
2007
Firstpage
1
Lastpage
2
Abstract
Basic properties of nano-structure semiconductor gain media such as an inhomogeneously broadened gain, a fast response time, a low alpha-parameter and complex carrier dynamics yield amplifiers which are far superior to conventional quantum well amplifiers.
Keywords
laser beams; quantum dot lasers; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wires; 2D active media; carrier dynamics yield amplifiers; inhomogeneously broadened gain; nanostructure semiconductor gain media; quantum dots; quantum well amplifiers; quantum wire; semiconductor optical amplifiers; Quantum dots; Semiconductor optical amplifiers; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location
Anaheim, CA
Print_ISBN
1-55752-831-4
Type
conf
DOI
10.1109/OFC.2007.4348924
Filename
4348924
Link To Document