Title :
Influence of depleted layers on the propagation characteristics and on the couplings in multilayer silicon ICs with buried diffusions
Author :
Wane, S. ; Bajon, D. ; Baudrand, H. ; Gamand, P.
Author_Institution :
ENSEEIHT, Toulouse, France
Abstract :
The influence of depleted layers on the propagation characteristics and on the couplings in multilayer silicon ICs with buried diffusions is studied from a fullwave analysis in the spectral domain. Particularly the frequency dependence of their effects is investigated in regard to the relative resistivities of the buried layers and that of the substrate.
Keywords :
electrical resistivity; electromagnetic coupling; electromagnetic wave propagation; elemental semiconductors; inhomogeneous media; microstrip lines; monolithic integrated circuits; silicon; spectral-domain analysis; Si; buried diffusions; buried layers; depleted layers; elemental semiconductors; frequency dependence; full-wave analysis; microstrip coupled lines; multilayer silicon IC; propagation characteristics; resistive layers; spectral domain analysis; Algorithm design and analysis; Conductivity; Coupling circuits; Dielectric losses; Dielectric substrates; Epitaxial layers; Frequency dependence; Nonhomogeneous media; Propagation losses; Silicon;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2001. IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7070-8
DOI :
10.1109/APS.2001.958921
