• DocumentCode
    1690489
  • Title

    Class-C power amplifier design for GSM application

  • Author

    Samal, Lopamudra ; Mahapatra, K.K. ; Raghuramaiah, K.

  • Author_Institution
    Electron. Commun. Dept., Nat. Inst. of Technol., Rourkela, India
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper presents a Class C Power Amplifier (PA) design with better efficiency for Global System for Mobile communications (GSM) application. This design is implemented in 90 nm CMOS technology, which consumes low power (around 1 Watt). This designed circuit is simulated and validated for different frequencies in between 935-960 MHz; this frequency range usually adopted in GSM applications. This circuit has efficiency of 50% and output gain is 23.15 dB.
  • Keywords
    CMOS analogue integrated circuits; cellular radio; power amplifiers; CMOS technology; GSM application; Global System for Mobile communications; class-C power amplifier design; frequency 935 MHz to 960 MHz; gain 23.15 dB; size 90 nm; CMOS integrated circuits; Gain; Power amplifiers; RLC circuits; Radio frequency; Resonant frequency; Transistors; CMOS technology; Class-C power amplifier; GSM;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computing, Communication and Applications (ICCCA), 2012 International Conference on
  • Conference_Location
    Dindigul, Tamilnadu
  • Print_ISBN
    978-1-4673-0270-8
  • Type

    conf

  • DOI
    10.1109/ICCCA.2012.6179216
  • Filename
    6179216
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1690489