Title :
Class-C power amplifier design for GSM application
Author :
Samal, Lopamudra ; Mahapatra, K.K. ; Raghuramaiah, K.
Author_Institution :
Electron. Commun. Dept., Nat. Inst. of Technol., Rourkela, India
Abstract :
This paper presents a Class C Power Amplifier (PA) design with better efficiency for Global System for Mobile communications (GSM) application. This design is implemented in 90 nm CMOS technology, which consumes low power (around 1 Watt). This designed circuit is simulated and validated for different frequencies in between 935-960 MHz; this frequency range usually adopted in GSM applications. This circuit has efficiency of 50% and output gain is 23.15 dB.
Keywords :
CMOS analogue integrated circuits; cellular radio; power amplifiers; CMOS technology; GSM application; Global System for Mobile communications; class-C power amplifier design; frequency 935 MHz to 960 MHz; gain 23.15 dB; size 90 nm; CMOS integrated circuits; Gain; Power amplifiers; RLC circuits; Radio frequency; Resonant frequency; Transistors; CMOS technology; Class-C power amplifier; GSM;
Conference_Titel :
Computing, Communication and Applications (ICCCA), 2012 International Conference on
Conference_Location :
Dindigul, Tamilnadu
Print_ISBN :
978-1-4673-0270-8
DOI :
10.1109/ICCCA.2012.6179216
