DocumentCode :
1690839
Title :
New structure of field-controlled thyristor with lateral channel
Author :
Haidong, Zheng ; Runtao, Ye ; Xinming, Lin ; Min, Chen
Author_Institution :
Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
fYear :
1992
Firstpage :
725
Abstract :
The authors describe a new structure of field-controlled thyristor with a lateral channel (LFCT) which has been developed successfully. This device possesses of some advantages, such as manufacture simplicity, high blocking gain, high switching speed and compatibility with ICs in monolithic mode
Keywords :
switching circuits; thyristors; blocking gain; field-controlled thyristor; lateral channel; manufacture; switching speed; Anodes; Cathodes; High speed integrated circuits; Leakage current; Manufacturing; Microwave devices; Microwave technology; PIN photodiodes; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on
Conference_Location :
Xian
Print_ISBN :
0-7803-0042-4
Type :
conf
DOI :
10.1109/ISIE.1992.279699
Filename :
279699
Link To Document :
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