Title :
High-order sideband generation in quantum wells driven by intense THz radiation: Electron-hole recollisions
Author :
Zaks, Benjamin ; Liu, Ren-Bao ; Sherwin, Mark S.
Author_Institution :
Dept. of Phys., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
When optically excited excitons in InGaAs quantum wells are driven by an intense THz field, electron-hole recollisions occur and sidebands of up to 18th order are observed.
Keywords :
III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; semiconductor quantum wells; GaAs; THz radiation; electron-hole recollision; high order sideband generation; optically excited exciton; quantum well; Amplitude modulation; Excitons; Free electron lasers; Laser excitation; Nonlinear optics; Optical harmonic generation; Physics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
