DocumentCode
1691102
Title
Hot Carrier Dynamics and Coherent Effects in GaN under Short Laser Pulse Excitation
Author
Rudin, S. ; Bellotti, E. ; Garrett, G.A. ; Wraback, M.
Author_Institution
US Army Res. Lab., Adelphi
fYear
2007
Firstpage
3
Lastpage
4
Abstract
The fast carrier dynamics in GaN under short laser pulse excitation is investigated theoretically, using a density matrix approach, and experimentally, using time-resolved photoluminescence. The rise time of the photoluminescence is determined by carrier scattering with LO phonons .
Keywords
III-V semiconductors; carrier density; gallium compounds; high-speed optical techniques; hot carriers; phonons; photoluminescence; wide band gap semiconductors; GaN; GaN - Binary; LO phonons; carrier scattering; coherent effects; density matrix approach; hot carrier dynamics; photoluminescence; short laser pulse excitation; Equations; Gallium arsenide; Gallium nitride; Hot carriers; Laser excitation; Optical pulse generation; Optical pulses; Photonic band gap; Scattering; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location
Newark, DE
Print_ISBN
978-1-4244-1431-4
Type
conf
DOI
10.1109/NUSOD.2007.4348995
Filename
4348995
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