Automotive 130 nm smart-power-technology including embedded flash functionality

Author

Rudolf, Ralf ; Wagner, Cajetan ; O´Riain, Lincoln ; Gebhardt, Karl-Heinz ; Kuhn-Heinrich, Barbara ; Von Ehrenwall, Birgit ; Von Ehrenwall, Andreas ; Strasser, Marc ; Stecher, Matthias ; Glaser, Ulrich ; Aresu, Stefano ; Kuepper, Paul ; Mayerhofer, Alevtin

Author_Institution

Infineon Technol. AG, Dresden, Germany

fYear

2011

Firstpage

20

Lastpage

23

Abstract

In this paper a 130 nm BCD technology platform is presented. The process offers logic-devices, flash-devices and high voltage devices with rated voltages up to 60 V. There are HV analog devices with variable channel length and HV power devices with low on-resistances. To ensure the safe operation of the power devices, a superior robustness against high energetic pulses of different length and repetitions could be achieved. The isolation of the different voltage stages is ensured by deep trenches and highly doped buried layers.

Keywords

BIMOS integrated circuits; flash memories; logic devices; power semiconductor devices; BCD technology platform; analog device; automotive smart-power-technology; embedded flash functionality; flash device; logic device; power device; size 130 nm; Copper; Metallization; Robustness; Semiconductor optical amplifiers; Substrates; Transistors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890780

Filename

5890780