Thermal Boundary Resistance in Optoelectronic Devices

Author

MacKenzie, R. ; Lim, J.J. ; Bull, S. ; Sujecki, S. ; Larkins, E.C.

Author_Institution

Univ. of Nottingham, Nottingham

fYear

2007

Firstpage

15

Lastpage

16

Abstract

A state-of-the-art electro-optical-thermal simulation tool is enhanced to include the effect of phonon reflections at epitaxial interfaces. A detailed numerical investigation of the alteration in electron/hole/phonon scattering rates and heat fluxes due to the thermal boundary resistance at hetero-junctions and epitaxial interfaces is carried out. The heat flux in a 1.3 mum edge-emitting laser and through VCSEL mirrors is considered. An increase in QW temperature within the edge-emitting laser of up to 0.3 K is observed.

Keywords

electro-optical devices; laser mirrors; laser theory; optoelectronic devices; quantum well lasers; semiconductor device models; semiconductor epitaxial layers; semiconductor heterojunctions; surface emitting lasers; thermal resistance; thermo-optical devices; VCSEL mirrors; edge-emitting laser; electro-optical-thermal simulation tool; electron-hole-phonon scattering rate; epitaxial interfaces; heat flux; heat fluxes; hetero-junctions; optoelectronic devices; phonon reflections; quantum well laser; size 1.3 mum; thermal boundary resistance; Charge carrier processes; Mirrors; Optical reflection; Optoelectronic devices; Phonons; Resistance heating; Scattering; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349001

Filename

4349001