Title :
Design and optimization of a GaAs-based sub-7-μm quantum cascade laser based on multivalley monte carlo simulation
Author :
Gao, X. ; Souza, M.D. ; Botez, D. ; Knezevic, I.
Author_Institution :
Univ. of Wisconsin - Madison, Madison
Abstract :
We present the design and optimization of a deep-well GaAs-based quantum cascade laser (QCL) emitting at 6.7 μm, the shortest wavelength in GaAs-based QCLs, using a multivalley Monte Carlo simulation. The simulation is performed self-consistently with the design process. The optimized structure exhibits sufficient gain to achieve lasing at both 77 K and 300 K. The calculated threshold currents are 5 kA/cm2 at 77 K and 14 kA/cm2 at 300 K.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; quantum cascade lasers; GaAs; GaAs - Interface; GaAs-based quantum cascade laser; III-V semiconductors; laser design; laser optimization; multivalley Monte Carlo simulation; temperature 300 K; temperature 77 K; wavelength 6.7 μm; Computational modeling; Current density; Design optimization; Gallium arsenide; Monte Carlo methods; Optical design; Process design; Quantum cascade lasers; Quantum computing; Threshold current;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location :
Newark, DE
Print_ISBN :
978-1-4244-1431-4
DOI :
10.1109/NUSOD.2007.4349002
