Title :
Thermal performance investigation of DQW GaInNAs laser diodes
Author :
Lim, J.J. ; MacKenzie, R. ; Sujecki, S. ; Sadeghi, M. ; Wang, S.M. ; Wei, Y.-Q. ; Larsson, A. ; Melanen, P. ; Uusimaa, P. ; George, A.A. ; Smowton, P.M. ; Larkins, E.C.
Author_Institution :
Univ. of Nottingham, Nottingham
Abstract :
In this work, we optimize the thermal performance of a double quantum well GalnNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the p-cladding doping concentration on the heat generation within the laser. It is found that due to the competition between Joule and free carrier absorption heating, an optimum p-cladding doping concentration/profile exists.
Keywords :
III-V semiconductors; calibration; doping profiles; electro-optical effects; gallium arsenide; gallium compounds; impurity distribution; indium compounds; quantum well lasers; thermo-optical effects; waveguide lasers; GaInNAs; GaInNAs - Interface; calibrated material parameters; calibration; carrier absorption heating; doping profile; double quantum well laser diodes; free carrier absorption heating; heat generation; in-house 2D electrooptothermal laser simulator; p-cladding doping concentration; ridge waveguide laser; thermal performance; Diode lasers; Equations; Laser modes; Optical materials; Quantum well lasers; Radiative recombination; Semiconductor devices; Semiconductor lasers; Spontaneous emission; Waveguide lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location :
Newark, DE
Print_ISBN :
978-1-4244-1431-4
DOI :
10.1109/NUSOD.2007.4349003
