Title :
300 V Field-MOS FETs for HV-switching IC
Author :
Miyoshi, T. ; Tominari, T. ; Hayashi, M. ; Ito, A. ; Yoshinaga, M. ; Ueno, S. ; Oshima, T. ; Wada, S.
Author_Institution :
Micro Device Div., Hitachi, Ltd., Ome, Japan
Abstract :
We have developed 300 V Field-MOS FETs for High-Voltage switching IC. The breakdown voltages are 410 V/370 V with specific on-resistance of 1845/11000 mΩ·mm2 for Field-NMOS/PMOS FETs, respectively. The vertical and lateral electric fields are both optimized to maximize a breakdown voltage at wide range of substrate voltages and minimize a specific on-resistance with a device layout optimization by introducing a Field Pate and a Extended-Drain layer. This technology can apply to 300 V High-Voltage switching IC with a low leak current and a low switching resistance.
Keywords :
MOS integrated circuits; MOSFET; breakdown voltage; device layout optimization; extended-drain layer; field-MOS FET; field-NMOS/PMOS FET; high-voltage switching IC; lateral electric fields; low leak current; low switching resistance; substrate voltage; voltage 300 V; voltage 370 V; voltage 410 V; Electric fields; Electric potential; FETs; Integrated circuits; Logic gates; Optimization; Silicon on insulator technology;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890785
