Title :
Development of the next generation 1700V trench-gate FS-IGBT
Author :
Onozawa, Y. ; Ozaki, D. ; Nakano, H. ; Yamazaki, T. ; Fujishima, N.
Author_Institution :
Fuji Electr. Syst. Co., Ltd., Nagano, Japan
Abstract :
This paper describes the next generation 1700V trench-gate FS-IGBT utilized the micro p-base structure for the first time. The new 1700V IGBT has been achieved that “better turn-on di/dt controllability”, “oscillation free turn-off” and “improved Von-Eoff trade-off relationship” as well as 600V and 1200V IGBTs. Furthermore, the critical thermal runaway temperature has successfully been elevated by the newly developed field-stop layer, which leads to increase of maximum junction temperature as high as 175 deg. C.
Keywords :
insulated gate bipolar transistors; Von-Eoff trade-off relationship; better turn-on di/dt controllability; critical thermal runaway temperature; field-stop layer; micro p-base structure; next generation 1700V trench-gate FS-IGBT; oscillation free turn-off; temperature 175 degC; voltage 1700 V; Current measurement; Electric fields; Insulated gate bipolar transistors; Leakage current; Power dissipation; Temperature measurement; Transient analysis; backside avalanche; field-Stop layer optimization; micro p-base structure; thermal runaway;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890788
