Title :
The radial layout design concept for the Bi-mode insulated gate transistor
Author :
Storasta, L. ; Rahimo, M. ; Bellini, M. ; Kopta, A. ; Vemulapati, U.R. ; Kaminski, N.
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
In this paper we present a new radial design concept for an optimized layout of anode shorts in the Bi-mode Insulating Gate Transistor (BiGT). The study shows that the arrangement of the n+-stripes plays a key role for the on-state characteristics of the BiGT. With the aid of 3D device simulations the visualization of the plasma distribution during the on-state conduction was obtained in a 0.25 × 4 mm2 large BiGT model area. The influence of the dimensioning and layout of the anode shorts was simulated and compared with measured on-state curves. A clear improvement of plasma distribution in the device when the stripes are arranged orthogonally (radially) to the pilot-IGBT boundary is observed in 3D simulations. Measurements confirm lower on-state losses as a result of better utilization of the device area.
Keywords :
insulated gate field effect transistors; semiconductor device models; 3D device simulations; Bi-mode insulated gate transistor; anode shorts; n<;sup>;+<;/sup>;-stripes; on-state conduction; plasma distribution; radial layout design concept; stripes; Anodes; Insulated gate bipolar transistors; Layout; Logic gates; Plasmas; Solid modeling; Three dimensional displays;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890789
