The key sputter deposition step in TAB wafer bump processing: optimizing TiW adhesion and diffusion barrier properties

Author

Traut, James

Author_Institution

Hewlett-Packard Co., Corvallis, OR, USA

fYear

1991

Firstpage

10

Lastpage

14

Abstract

Sputter deposition is used in tape automated bonding (TAB) as the first step of wafer processing in order to plate gold bumps at the die pads. The adhesion and barrier properties of TiW films are investigated here. Adhesion is critical for TAB as bond strengths are touted to be 2-x to 3-x that of wire bonding. Barrier integrity is important to enhance the hermetic seal properties again touted with TAB. TiW film thicknesses, the structure of TiW and TiWN layering, and deposition characteristics are described in optimizing the TAB sputter deposition process

Keywords

sputter deposition; tape automated bonding; TAB; TAB wafer bump processing; TiW adhesion; TiW films; TiWN layering; bond strengths; deposition characteristics; diffusion barrier properties; film thicknesses; hermetic seal properties; process optimisation; sputter deposition; tape automated bonding; Adhesives; Aluminum; Annealing; Gold; Pollution measurement; Production; Sputtering; Testing; Wafer bonding; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Manufacturing Technology Symposium, 1991., Eleventh IEEE/CHMT International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-0155-2

Type

conf

DOI

10.1109/IEMT.1991.279736

Filename

279736