Title :
The key sputter deposition step in TAB wafer bump processing: optimizing TiW adhesion and diffusion barrier properties
Author_Institution :
Hewlett-Packard Co., Corvallis, OR, USA
Abstract :
Sputter deposition is used in tape automated bonding (TAB) as the first step of wafer processing in order to plate gold bumps at the die pads. The adhesion and barrier properties of TiW films are investigated here. Adhesion is critical for TAB as bond strengths are touted to be 2-x to 3-x that of wire bonding. Barrier integrity is important to enhance the hermetic seal properties again touted with TAB. TiW film thicknesses, the structure of TiW and TiWN layering, and deposition characteristics are described in optimizing the TAB sputter deposition process
Keywords :
sputter deposition; tape automated bonding; TAB; TAB wafer bump processing; TiW adhesion; TiW films; TiWN layering; bond strengths; deposition characteristics; diffusion barrier properties; film thicknesses; hermetic seal properties; process optimisation; sputter deposition; tape automated bonding; Adhesives; Aluminum; Annealing; Gold; Pollution measurement; Production; Sputtering; Testing; Wafer bonding; Wire;
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1991., Eleventh IEEE/CHMT International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-0155-2
DOI :
10.1109/IEMT.1991.279736
