Monte Carlo Simulation of Excess Noise in Heterojunction Avalanche Photodetector

Author

Ghosh, A. ; Ghosh, K.K.

Author_Institution

Centre for Sci. Educ. & Res., Calcutta

fYear

2007

Firstpage

41

Lastpage

42

Abstract

Avalanche photodetectors (APDs) are important optoelectronic devices used in the detection of very low optical signals in fibre-optic communication systems. The advantage of high gain mechanism through carrier multiplication in materials is exploited in designing the APDs. The use of random path length (RPL) model in the framework of Monte-Carlo (MC) method has proved to yield results in agreement with the observed experimental values.

Keywords

III-V semiconductors; Monte Carlo methods; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; optical signal detection; photodetectors; semiconductor device noise; APD design; APD excess noise; InP-InGaAs; InP-InGaAs - Interface; Monte Carlo simulation; carrier multiplication; fibre-optic communication systems; gain mechanism; heterojunction avalanche photodetector; low optical signal detection; optoelectronic devices; photodiodes; random path length model; Electron optics; Heterojunctions; Indium gallium arsenide; Indium phosphide; Ionization; Kinetic theory; Optical noise; Optical saturation; Optical scattering; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on

Conference_Location

Newark, DE

Print_ISBN

978-1-4244-1431-4

Type

conf

DOI

10.1109/NUSOD.2007.4349014

Filename

4349014