DocumentCode
1691574
Title
Simulation of quantum wells with `spikes´ and `dips´
Author
Laakso, Antti ; Dumitrescu, Mihail ; Toikkanen, Lauri ; Tukiainen, Antti ; Rimpilainen, Ville ; Pessa, Markus
Author_Institution
Tampere Univ. of Technol., Tampere
fYear
2007
Firstpage
47
Lastpage
48
Abstract
The use of thin high-bandgap ´spikes´ or thin low-bandgap ´dips´ inside conventional rectangular quantum wells gives supplementary flexibility in engineering intra- and inter-band energy level separation. The paper presents simulation and experimental studies of the effects of ´spikes´ and ´dips´ on the fundamental quantum well properties.
Keywords
III-V semiconductors; energy gap; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; GaInP; GaInP - Interface; high-bandgap spikes; inter-band energy level separation; intra-band energy level separation; photoluminescence; quantum wells; thin low-bandgap dips; Capacitive sensors; Effective mass; Energy capture; Energy states; Equations; Lattices; Optical polarization; Potential energy; Power engineering and energy; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2007. NUSOD '07. International Conference on
Conference_Location
Newark, DE
Print_ISBN
978-1-4244-1431-4
Type
conf
DOI
10.1109/NUSOD.2007.4349017
Filename
4349017
Link To Document