Title :
Ultra low loss trench gate PCI-PiN diode with VF<350mV
Author :
Tsuda, Motohiro ; Matsumoto, Yasuaki ; Omura, Ichiro
Author_Institution :
Dept. of Electr. Eng. & Electron., Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
PiN diode forward voltage drop was reduced to as low as 325mV by the pulsed carrier injection (PCI) mechanism with trench MOS gate as the integrated injection control switch. The conventional PiN diodes have voltage drop of about 0.8V which is equivalent to 1%-2% energy loss in home appliances. The proposed PCI-PiN diode reduces the loss by more than 50% and the diode structure has process compatibility to conventional IGBTs and trench MOSFETs for easy implementation into mass production. The authors also confirmed PCI concept with the experiment with BSIT.
Keywords :
MIS devices; p-i-n diodes; transistors; MOS gate; PiN diode forward voltage drop; bipolar mode static induction transistor; integrated injection control switch; pulsed carrier injection; pulsed carrier injection mechanism; ultra low loss trench gate PCI-PiN diode; Anodes; Cathodes; Charge carrier processes; Logic gates; MOSFETs; PIN photodiodes; Switches;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890796
