DocumentCode :
1691873
Title :
Optimization of diodes using the SPEED concept and CIBH
Author :
Pfaffenlehner, Manfred ; Felsl, Hans-Peter ; Niedernostheide, F.-J. ; Pfirsch, F. ; Schulze, H.-J. ; Baburske, R. ; Lutz, Josef
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
fYear :
2011
Firstpage :
108
Lastpage :
111
Abstract :
The surge current ruggedness of free-wheeling diodes can be improved by implementing the SPEED concept (Self-adjusting P Emitter Efficiency Diode). Experiments show that the switching ruggedness of such a diode is worse than that of a conventional diode. Simulations indicate that during diode turn-off filaments are pinned at the cathode side. These filaments can be avoided by implementing CIBH (Controlled Injection of Backside Holes). It turns out that a necessary additional measure is to fully embed the p+-areas of the SPEED anode in the low-doped p-type area to avoid high electrical field strengths and current crowding at the anode side. Combining these measures, the appearance of current filaments with an extremely high current density and their pinning to a certain area in the device during the turn-off period can be avoided.
Keywords :
cathodes; circuit optimisation; current density; power semiconductor diodes; SPEED anode; SPEED concept; backside hole controlled injection; current filaments; diode optimization; diode turn-off filaments; free-wheeling diodes; high current density; low-doped p-type area; self-adjusting P emitter efficiency diode; Anodes; Current density; Semiconductor diodes; Semiconductor optical amplifiers; Surges; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
ISSN :
1943-653X
Print_ISBN :
978-1-4244-8425-6
Type :
conf
DOI :
10.1109/ISPSD.2011.5890802
Filename :
5890802
Link To Document :
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