Effect of deposition conditions on stability of sputtered oxide in MOS structures

Author

Jelenkovic, Emil V. ; Tong, K.Y.

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong

Volume

1

fYear

1995

Firstpage

37

Abstract

In this paper we investigate the relation between electrical stability and oxide deposition conditions in sputtered oxide. We found that lower sputtering pressure and lower discharge voltage with the addition of oxygen in sputtering gas mixture gives better resistance to interface states generations during constant current stress. Also sputtered oxide applied in TFTs showed a remarkable stability under moderate stress fields

Keywords

MIS devices; dielectric thin films; interface states; semiconductor-insulator boundaries; silicon compounds; sputter deposition; sputtered coatings; stability; thin film transistors; Ar; Ar-O₂; MOS structures; O₂; Si-SiO₂; TFTs; constant current stress; discharge voltage; electrical stability; interface states generation; oxide deposition conditions; sputtered oxide stability; sputtering gas mixture; sputtering pressure; Annealing; Interface states; Optical films; Semiconductor films; Silicon; Sputtering; Stability; Stress; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1995. Proceedings., 1995 20th International Conference on

Conference_Location

Nis

Print_ISBN

0-7803-2786-1

Type

conf

DOI

10.1109/ICMEL.1995.500830

Filename

500830