Title :
Effect of deposition conditions on stability of sputtered oxide in MOS structures
Author :
Jelenkovic, Emil V. ; Tong, K.Y.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech., Hung Hom, Hong Kong
Abstract :
In this paper we investigate the relation between electrical stability and oxide deposition conditions in sputtered oxide. We found that lower sputtering pressure and lower discharge voltage with the addition of oxygen in sputtering gas mixture gives better resistance to interface states generations during constant current stress. Also sputtered oxide applied in TFTs showed a remarkable stability under moderate stress fields
Keywords :
MIS devices; dielectric thin films; interface states; semiconductor-insulator boundaries; silicon compounds; sputter deposition; sputtered coatings; stability; thin film transistors; Ar; Ar-O2; MOS structures; O2; Si-SiO2; TFTs; constant current stress; discharge voltage; electrical stability; interface states generation; oxide deposition conditions; sputtered oxide stability; sputtering gas mixture; sputtering pressure; Annealing; Interface states; Optical films; Semiconductor films; Silicon; Sputtering; Stability; Stress; Thin film transistors; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500830
