Title :
Reduction of the temperature dependence of leakage current of IGBTs by field-stop design
Author :
Schulze, H.-J. ; Voss, S. ; Huesken, H. ; Niedernostheide, F.-J.
Author_Institution :
Infineon Technol. AG, München, Germany
Abstract :
In this paper we propose a new method to reduce the temperature dependence of the leakage current of IGBTs by reducing the temperature dependence of the anode-side current gain αpnp. The temperature dependence of αpnp can be reduced by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. We demonstrate how the temperature dependence of the leakage current is influenced when using deep-level donors instead of shallow-level donors in the field-stop zone.
Keywords :
deep levels; doping; elemental semiconductors; insulated gate bipolar transistors; leakage currents; silicon; IGBT leakage current; anode-side current gain α<;sub>;pnp<;/sub>;; deep levels; deep-level donors; doping atoms; field-stop design; field-stop zones; shallow-level donors; silicon band gap; Doping; Energy states; Insulated gate bipolar transistors; Leakage current; Niobium; Temperature dependence; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890805
