• DocumentCode
    1692000
  • Title

    Very thin SiO2 layers after rapid thermal annealing in vacuum

  • Author

    Paskaleva, A. ; Atanossova, E.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    1
  • fYear
    1995
  • Firstpage
    57
  • Abstract
    The influence of the rapid thermal annealing (RTA) in vacuum on the properties of very thin SiO2 (11 nm) has been investigated electrically and by means of XPS. The results showed that RTA at Ta⩽1273 K anneals original electron traps in SiO 2 but in the same time it additionally introduces positive oxide charge. It is proposed that the observed strong deterioration of the electrical properties of the samples annealed at Ta=1473 K is due to the spontaneous decomposition of the oxide
  • Keywords
    X-ray photoelectron spectra; electron traps; insulating thin films; rapid thermal annealing; silicon compounds; 1273 K; 1473 K; SiO2; SiO2 thin layers; XPS; decomposition; electrical properties; electron traps; positive oxide charge; rapid thermal annealing; vacuum annealing; Bonding; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electric breakdown; Electrodes; Electron traps; Rapid thermal annealing; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500834
  • Filename
    500834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1692000