Title :
Very thin SiO2 layers after rapid thermal annealing in vacuum
Author :
Paskaleva, A. ; Atanossova, E.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
The influence of the rapid thermal annealing (RTA) in vacuum on the properties of very thin SiO2 (11 nm) has been investigated electrically and by means of XPS. The results showed that RTA at Ta⩽1273 K anneals original electron traps in SiO 2 but in the same time it additionally introduces positive oxide charge. It is proposed that the observed strong deterioration of the electrical properties of the samples annealed at Ta=1473 K is due to the spontaneous decomposition of the oxide
Keywords :
X-ray photoelectron spectra; electron traps; insulating thin films; rapid thermal annealing; silicon compounds; 1273 K; 1473 K; SiO2; SiO2 thin layers; XPS; decomposition; electrical properties; electron traps; positive oxide charge; rapid thermal annealing; vacuum annealing; Bonding; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electric breakdown; Electrodes; Electron traps; Rapid thermal annealing; Temperature; Voltage;
Conference_Titel :
Microelectronics, 1995. Proceedings., 1995 20th International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-2786-1
DOI :
10.1109/ICMEL.1995.500834
