• DocumentCode
    1692026
  • Title

    A multi-level phase detector in 90 nm CMOS

  • Author

    Sanchez-Azqueta, C. ; Celma, S. ; Gimeno, C.

  • Author_Institution
    Group of Electron. Design, Univ. of Zaragoza, Zaragoza, Spain
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents the design and functional simulation of a new multi-level bang-bang phase detector for use in a clock and data recovery circuit (CDR). The designed phase detector provides information of the nature of the delay between its input signals in a digitised manner, establishing seven levels of quantisation. To avoid the metastability that hinders the performance of traditional bang-bang phase detectors, a scheme of phase delay sensing is proposed that eliminates the need to sample the data stream close to data transitions in the locked state. Behavioural simulations of the proposed phase detector are provided, as well as of its performance in a CDR circuit.
  • Keywords
    CMOS integrated circuits; clock and data recovery circuits; phase detectors; CDR circuit; CMOS; bang-bang phase detectors; behavioural simulation; clock and data recovery circuit; data stream; data transition; functional simulation; locked state; metastability; multilevel bang-bang phase detector; multilevel phase detector; phase delay sensing; quantisation; size 90 nm; CMOS integrated circuits; Charge pumps; Clocks; Detectors; Flip-flops; Low pass filters; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4673-1207-3
  • Type

    conf

  • DOI
    10.1109/LASCAS.2012.6180330
  • Filename
    6180330