DocumentCode
1692049
Title
Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism
Author
Rudenko, T. ; Lysenko, V. ; Kilchytska, V. ; Rudenko, A. ; Colinge, J.P.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
83
Lastpage
86
Abstract
In this paper, off-state leakage currents in long-channel SOI MOSFETs are investigated by simulation and measurements in the range 50-320°C. The general trends of high-temperature off-state currents are interpreted in terms of the diffusion mechanism. The back-gate biasing and silicon film thinning effects are considered. Both single- and double-gate operation cases are analyzed
Keywords
MOSFET; leakage currents; silicon-on-insulator; surface diffusion; SOI MOSFETs; Si; Si film thinning effects; back-gate biasing; diffusion mechanism; high-temperature off-state currents; off-state leakage currents; Computational modeling; Current measurement; Doping; Leakage current; MOSFETs; Mechanical factors; Semiconductor films; Silicon; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location
Berlin
Print_ISBN
0-7803-5795-7
Type
conf
DOI
10.1109/HITEN.1999.827468
Filename
827468
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