Title :
Electrical and optical properties of Mg ion implanted GaN p-n junctions
Author :
Kalinina, E.V. ; Zubrilov, A.S. ; Chuk, A. M Strel ; Solov´ev, V.A. ; Dmitriev, V.A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
6/21/1905 12:00:00 AM
Abstract :
In this paper we report the electrical and optical properties of GaN p-n diodes fabricated by Mg ion implantation doping of n-type GaN epitaxial layers. Ion implantation was performed at room temperature with doses ranged from 1013 to 2×1016 cm-2. After implantation samples were annealed for 10-15 s at a wide temperature interval from 600°C to 1200°C in flowing N 2 to form p-type layers. Scanning electron microscopy with electron beam induced current and back scattered electron modes as well as current-voltage and capacitance-voltage measurements were used to study structural and electrical characteristics of the Mg implanted p-n structures. Samples were characterized by photoluminescence. Electroluminescence from Mg implanted p-n junction structures has been observed for the first time
Keywords :
EBIC; III-V semiconductors; annealing; electroluminescence; gallium compounds; ion implantation; magnesium; p-n junctions; photoluminescence; scanning electron microscopy; semiconductor doping; semiconductor epitaxial layers; wide band gap semiconductors; 10 to 15 s; 600 to 1200 C; GaN:Mg; GaN:Mg p-n diodes; Mg ion implanted GaN p-n junctions; annealed; back scattered electron modes; electroluminescence; electron beam induced current; ion implantation; photoluminescence; scanning electron microscopy; Annealing; Diodes; Doping; Electron beams; Epitaxial layers; Gallium nitride; Ion implantation; Optical scattering; Particle beam optics; Temperature distribution;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827470
