• DocumentCode
    1692143
  • Title

    Electroless Ni-P and Ni-W-P films as a barrier for thermostimulated diffusion of gold into semiconductor

  • Author

    Stepanova, L.I.

  • Author_Institution
    Sci. Res. Inst. of Phys. & Chem. Problem, Byelorussian State Univ., Minsk
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    101
  • Lastpage
    106
  • Abstract
    Amorphous electroless Ni-P films rich in phosphorus content were shown to be better diffusion barrier to the thermostimulated diffusion of gold into substrates than vacuum deposited pure nickel films the same thickness. The authors of the present paper are quite experienced in theory and practice of electroless deposition of metal films differing in their composition and structure. Among the electroless films the amorphous ones have a significant place, being of interest primarily for their specific microstructure and the resulting behavior in diffusion and corrosion process or on heating. Thus the paper is concerned with some new findings on the regularities of thermostimulated gold diffusion in amorphous and crystalline Ni-P and amorphous Ni-W-P films
  • Keywords
    diffusion barriers; metallic thin films; nickel alloys; phosphorus alloys; surface diffusion; tungsten alloys; Ni-P; Ni-P films; Ni-W-P; Ni-W-P films; diffusion barrier; electroless deposition; thermostimulated diffusion; Amorphous materials; Chemicals; Etching; Gold alloys; Heating; Microstructure; Nickel alloys; Semiconductor films; Substrates; Vacuum arcs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
  • Conference_Location
    Berlin
  • Print_ISBN
    0-7803-5795-7
  • Type

    conf

  • DOI
    10.1109/HITEN.1999.827473
  • Filename
    827473