DocumentCode
1692143
Title
Electroless Ni-P and Ni-W-P films as a barrier for thermostimulated diffusion of gold into semiconductor
Author
Stepanova, L.I.
Author_Institution
Sci. Res. Inst. of Phys. & Chem. Problem, Byelorussian State Univ., Minsk
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
101
Lastpage
106
Abstract
Amorphous electroless Ni-P films rich in phosphorus content were shown to be better diffusion barrier to the thermostimulated diffusion of gold into substrates than vacuum deposited pure nickel films the same thickness. The authors of the present paper are quite experienced in theory and practice of electroless deposition of metal films differing in their composition and structure. Among the electroless films the amorphous ones have a significant place, being of interest primarily for their specific microstructure and the resulting behavior in diffusion and corrosion process or on heating. Thus the paper is concerned with some new findings on the regularities of thermostimulated gold diffusion in amorphous and crystalline Ni-P and amorphous Ni-W-P films
Keywords
diffusion barriers; metallic thin films; nickel alloys; phosphorus alloys; surface diffusion; tungsten alloys; Ni-P; Ni-P films; Ni-W-P; Ni-W-P films; diffusion barrier; electroless deposition; thermostimulated diffusion; Amorphous materials; Chemicals; Etching; Gold alloys; Heating; Microstructure; Nickel alloys; Semiconductor films; Substrates; Vacuum arcs;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location
Berlin
Print_ISBN
0-7803-5795-7
Type
conf
DOI
10.1109/HITEN.1999.827473
Filename
827473
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