DocumentCode :
1692143
Title :
Electroless Ni-P and Ni-W-P films as a barrier for thermostimulated diffusion of gold into semiconductor
Author :
Stepanova, L.I.
Author_Institution :
Sci. Res. Inst. of Phys. & Chem. Problem, Byelorussian State Univ., Minsk
fYear :
1999
fDate :
6/21/1905 12:00:00 AM
Firstpage :
101
Lastpage :
106
Abstract :
Amorphous electroless Ni-P films rich in phosphorus content were shown to be better diffusion barrier to the thermostimulated diffusion of gold into substrates than vacuum deposited pure nickel films the same thickness. The authors of the present paper are quite experienced in theory and practice of electroless deposition of metal films differing in their composition and structure. Among the electroless films the amorphous ones have a significant place, being of interest primarily for their specific microstructure and the resulting behavior in diffusion and corrosion process or on heating. Thus the paper is concerned with some new findings on the regularities of thermostimulated gold diffusion in amorphous and crystalline Ni-P and amorphous Ni-W-P films
Keywords :
diffusion barriers; metallic thin films; nickel alloys; phosphorus alloys; surface diffusion; tungsten alloys; Ni-P; Ni-P films; Ni-W-P; Ni-W-P films; diffusion barrier; electroless deposition; thermostimulated diffusion; Amorphous materials; Chemicals; Etching; Gold alloys; Heating; Microstructure; Nickel alloys; Semiconductor films; Substrates; Vacuum arcs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
Type :
conf
DOI :
10.1109/HITEN.1999.827473
Filename :
827473
Link To Document :
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