DocumentCode
1692158
Title
Effect of irradiation on excess currents in 6H-SiC p-n structures
Author
Chuk, A. M Strel ; Kozlovski, V.V. ; Smirnova, N.Yu. ; Kevich, J. J Pil ; Rastegaeva, M.G.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
107
Abstract
Summary form only given. The results of investigations of the influence exerted by different kinds of irradiation of SiC p-n structures on the magnitude of forward and reverse excess currents are presented. The objects of study were 6H-SiC p+-n structures based on commercial n and p epitaxial layers
Keywords
high-temperature electronics; p-n junctions; radiation effects; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 6H-SiC p-n structures; SiC; excess currents; forward excess currents; irradiation effect; p+-n structures; reverse excess currents; Annealing; Electrons; Epitaxial layers; Etching; Protection; Protons; Silicon carbide; Spontaneous emission; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location
Berlin
Print_ISBN
0-7803-5795-7
Type
conf
DOI
10.1109/HITEN.1999.827474
Filename
827474
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