Title :
Effect of irradiation on excess currents in 6H-SiC p-n structures
Author :
Chuk, A. M Strel ; Kozlovski, V.V. ; Smirnova, N.Yu. ; Kevich, J. J Pil ; Rastegaeva, M.G.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
6/21/1905 12:00:00 AM
Abstract :
Summary form only given. The results of investigations of the influence exerted by different kinds of irradiation of SiC p-n structures on the magnitude of forward and reverse excess currents are presented. The objects of study were 6H-SiC p+-n structures based on commercial n and p epitaxial layers
Keywords :
high-temperature electronics; p-n junctions; radiation effects; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; 6H-SiC p-n structures; SiC; excess currents; forward excess currents; irradiation effect; p+-n structures; reverse excess currents; Annealing; Electrons; Epitaxial layers; Etching; Protection; Protons; Silicon carbide; Spontaneous emission; Substrates; Voltage;
Conference_Titel :
High Temperature Electronics, 1999. HITEN 99. The Third European Conference on
Conference_Location :
Berlin
Print_ISBN :
0-7803-5795-7
DOI :
10.1109/HITEN.1999.827474
