Title :
Prognostics of power MOSFET
Author :
Celaya, José R. ; Saxena, Abhinav ; Saha, Sankalita ; Vashchenko, Vladislav ; Goebel, Kai
Author_Institution :
Prognostics Center of Excellence, NASA Ames Res. Center, Moffett Field, CA, USA
Abstract :
This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.
Keywords :
Gaussian processes; failure analysis; finite element analysis; microassembling; power MOSFET; regression analysis; Gaussian process regression; ON-state resistance; SOA; die-attachment degradation; failure mechanism; finite element analysis simulation; junction temperature; metal oxide field effect transistor; power MOSFET prognostics; safe operation area; stress conditions; thermal cycling; two-transistor model; voltage 100 V; Accelerated aging; Degradation; Logic gates; Power MOSFET; Prognostics and health management; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-8425-6
DOI :
10.1109/ISPSD.2011.5890815
